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| Si7434DP New Product Vishay Siliconix N-Channel 250-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 250 FEATURES ID (A) 3.8 3.7 rDS(on) (W) 0.155 @ VGS = 10 V 0.162 @ VGS = 6 V D PWM-OptimizedTrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested APPLICATIONS D Primary Side Switch In: - Telecom Power Supplies - Distributed Power Architectures - Miniature Power Modules PowerPAK SO-8 D 6.15 mm S 1 2 S 3 S 4 D 8 7 D 6 D 5 D G 5.15 mm G N-Channel MOSFET Bottom View Ordering Information: Si7434DP-T1--E3 Creepage Clearance: 30 mils S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 250 "20 3.8 3.0 40 4.3 13 8.4 5.2 3.3 Steady State Unit V 2.3 1.8 A 1.6 mJ 1.9 1.2 W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72579 S-32408--Rev. A, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 19 52 1.5 Maximum 24 65 1.8 Unit _C/W C/W 1 Si7434DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 250 V, VGS = 0 V VDS = 250 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 3.8 A VGS = 6.0 V, ID = 3.7 A VDS = 15 V, ID = 3.8 A IS = 2.8 A, VGS = 0 V 30 0.129 0.131 14 0.75 1.2 0.155 0.162 W S V 2.0 4.0 "100 1 15 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.8 A, di/dt = 100 A/ms VDD = 100 V, RL = 25 W ID ^ 4.0 A, VGEN = 10 V, RG = 6 W 0.6 VDS = 100 V, VGS = 10 V, ID = 3.8 A 34 6.8 10.5 1.2 16 23 47 19 100 1.8 25 35 70 30 150 ns W 50 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 6 V 24 I D - Drain Current (A) I D - Drain Current (A) 40 35 30 5V 25 20 15 10 5 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 0 1 Transfer Characteristics 18 12 TC = 125_C 25_C -55_C 2 3 4 5 6 6 VGS - Gate-to-Source Voltage (V) Document Number: 72579 S-32408--Rev. A, 24-Nov-03 2 Si7434DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.30 r DS(on) - On-Resistance ( W ) 2500 Vishay Siliconix Capacitance C - Capacitance (pF) 0.24 2000 Ciss 1500 0.18 VGS = 6 V 0.12 VGS = 10 V 1000 Coss Crss 0.06 500 0.00 0 8 16 24 32 40 0 0 50 100 150 200 250 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 100 V ID = 3.8 A 8 2.5 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.8 A 2.0 6 r DS(on) - On-Resistance ( W) (Normalized) 14 21 28 35 1.5 4 2 1.0 0 0 7 Qg - Total Gate Charge (nC) 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 50 0.25 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.20 ID = 3.8 A 0.15 I S - Source Current (A) TJ = 150_C 10 0.10 TJ = 25_C 0.05 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72579 S-32408--Rev. A, 24-Nov-03 www.vishay.com 3 Si7434DP Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 1.0 100 Single Pulse Power, Juncion-to-Ambient 0.5 V GS(th) Variance (V) ID = 250 mA Power (W) 80 0.0 60 -0.5 40 -1.0 20 -1.5 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (_C) 100 Safe Operating Area, Junction-to-Case 10 I D - Drain Current (A) Limited by rDS(on) 1 1 ms 10 ms 0.1 TC = 25_C Single Pulse 100 ms 1s 0.01 10 s dc 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 1 Square Wave Pulse Duration (sec) 10-1 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 68_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72579 S-32408--Rev. A, 24-Nov-03 Si7434DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Vishay Siliconix Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72579 S-32408--Rev. A, 24-Nov-03 www.vishay.com 5 |
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